MMBV809LT1 |
RFQ for MMBV809LT1 Required Field |
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| Technical/Catalog Information | MMBV809LT1 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| Packaging | Cut Tape (CT) |
| Capacitance @ Vr, F | 6.1pF @ 2V, 1MHz |
| Q @ Vr, F | 75 @ 3V, 500MHz |
| Capacitance Ratio | 2.6 |
| Voltage - Peak Reverse (Max) | 20V |
| Diode Type | Single |
| Mounting Type | Surface Mount |
| Capacitance Ratio Condition | C2/C8 |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMBV809LT1 MMBV809LT1 MMBV809LT1OSCT ND MMBV809LT1OSCTND MMBV809LT1OSCT |
| Product | Manufacturers | Pack | D/C |
| MMBV809LT1 | - | - | 07/08+ |
This device is designed for 900 MHz frequency control and tuning applications. It provides solidstate reliability in replacement of mechanical tuning methods.
Features |
| • Controlled and Uniform Tuning Ratio• Available in Surface Mount Package• Available in 8 mm Tape and Reel |
| Rating | Symbol | Value | Unit |
| Reverse Voltage | VR | 20 | Vdc |
| Forward Current | IF | 20 | mAdc |
| Total Power Dissipation(1) @ TA = 25°C Derate above 25°C |
PD | 225 1.8 |
mW mW/°C |
| Junction Temperature | TJ | +125 | °C |
| Storage Temperature Range | Tstg | 55 to +125 | °C |
